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2sk1254(l), 2sk1254(s) silicon n-channel mos fet ade-208-1255 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching 4 v gate drive device ? can be driven from 5 v source suitable for motor drive, dc-dc converter, power switch and solenoid drive outline 1 2 3 1 2 3 4 4 dpak-1 1. gate 2. drain 3. source 4. drain d g s
2sk1254(l), 2sk1254(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 120 v gate to source voltage v gss ?0 v drain current i d 3a drain peak current i d(pulse) * 1 12 a body to drain diode reverse drain current i dr 3a channel dissipation pch* 2 20 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes: 1. pw 10 ?, duty cycle 1% 2. value at t c = 25?
2sk1254(l), 2sk1254(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 120 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 100 ? v ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.30 0.40 i d = 2 a, v gs = 10 v * 1 0.35 0.55 i d = 2 a, v gs = 4 v * 1 forward transfer admittance |yfs| 2.4 4.0 s i d = 2 a, v ds = 10 v * 1 input capacitance ciss 420 pf v ds = 10 v, v gs = 0, output capacitance coss 190 pf f = 1 mhz reverse transfer capacitance crss 25 pf turn-on delay time t d(on) ? ?si d = 2 a, v gs = 10 v, rise time t r 20 ns r l = 15 turn-off delay time t d(off) 150 ns fall time t f ?5ns body to drain diode forward voltage v df 0.95 v i f = 3 a, v gs = 0 body to drain diode reverse recovery time t rr 160 ns i f = 3 a, v gs = 0, di f /dt = 50 a/? note: 1. pulse test
2sk1254(l), 2sk1254(s) 4 power vs. temperature derating 30 20 10 0 channel dissipation pch (w) 50 100 150 case temperature t c (?) maximum safe operation area 1 10 1,000 drain to source voltage v ds (v) 0.5 0.05 100 50 2 drain current i d (a) 1 ms 100 m s 10 m s 300 30 3 0.1 0.2 1.0 5 10 20 pw = 10 ms (1 shot) operation in this area is limited by r ds (on) dc operation (t c = 25?) ta = 25? typical output characteristics 5 4 3 2 0 4 8 12 16 20 1 drain current i d (a) drain to source voltage v ds (v) pulse test v gs = 2 v 4 v 3 v 2.5 v 10 v typical transfer characteristics 4 3 2 1 0 12345 gate to source voltage v gs (v) 5 75? drain current i d (a) v ds = 10 v pulse test ?5? t c = 25?
2sk1254(l), 2sk1254(s) 5 2.0 1.6 1.2 0.8 0.4 0 246810 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage 3 a 2 a i d = 1 a pulsetest drain to source saturation voltage v ds (on) (v) 5 2 1.0 0.5 0.05 0.5 1.0 2.0 5.0 20 drain current i d (a) 0.2 static drain to source on state resistance vs. drain current 10 0.2 0.1 pulse test static drain to source on state resistance r ds (on) ( w ) 10 v v gs = 4 v 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 case temperature t c (?) ?0 static drain to source on state resistance vs. temperature pulse test 1, 2 a i d = 3 a 3 a 1, 2 a v gs = 4 v v gs = 10 v static drain to source on state resistance r ds (on) ( w ) forward transfer admittance vs. drain current 10 5 2 1.0 0.1 0.2 5 0.2 0.5 0.5 drain current i d (a) forward transfer admittance ? yfs ? (s) 1.0 2 0.05 0.1 ?5? t c = 25? 75? v ds = 10 v pulse test
2sk1254(l), 2sk1254(s) 6 body to drain diode reverse recovery time reverse drain current i dr (a) reverse recovery time t rr (ns) 500 200 50 20 10 5 100 0.1 0.2 0.5 1.0 2 5 10 di/dt = 50 a/ m s, ta = 25? v gs = 0 pulse test typical capacitance vs. drain to source voltage 1,000 100 10 1 0 1020304050 drain to source voltage v ds (v) capacitance c (pf) v gs = 0 f = 1 mhz coss ciss crss dynamic input characteristics 100 80 60 40 20 0 816243240 gate charge qg (nc) 20 16 12 8 4 0 gate to source voltage v gs (v) 50 v v dd = 25 v v ds i d = 3 a v gs v dd = 80 v 50 v drain to source voltage v ds (v) 80 v 25 v switching characteristics 500 100 50 20 10 5 200 switching time t (ns) 1.0 0.2 0.5 1.0 2 10 drain current i d (a) 5 t r t f t d (off) t d (on) < v gs = 10 v v dd = 30 v pw = 2 m s, duty 1 %
2sk1254(l), 2sk1254(s) 7 reverse drain current vs. source to drain voltage 5 4 3 2 1 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) pulse test 10 v 15 v v gs = 0, ? v 3 1.0 0.1 0.03 0.01 0.3 10 m 100 m 1 m 10 m 100 m 1 10 pulse width pw (s) 0.05 0.02 0.2 0.1 0.5 d = 1 q ch? (t) = g s (t) ? q ch? q ch? = 6.25?/w, t c = 25? p dm pw t d = t pw normalized transient thermal impedance vs. pulse width normalized transient thermal impedance g s (t) 1 shot pulse t c = 25? 0.01 vin monitor vout monitor r l 50 w vin = 10 v d.u.t . v dd = 30 v . switching time test circuit vin 10 % 90 % 90 % 90 % 10 % t d (on) t d (off) t r t f vout 10 % wavewforms
2sk1254(l), 2sk1254(s) 8 package dimensions hitachi code jedec eiaj mass (reference value) dpak (l)-(1) conforms 0.42 g 6.5 0.5 2.3 0.2 0.55 0.1 1.2 0.3 0.55 0.1 5.5 0.5 1.7 0.5 16.2 0.5 3.1 0.5 5.4 0.5 1.15 0.1 2.29 0.5 2.29 0.5 0.8 0.1 as of january, 2001 unit: mm
2sk1254(l), 2sk1254(s) 9 hitachi code jedec eiaj mass (reference value) dpak (s)-(1),(2) conforms 0.28 g as of january, 2001 unit: mm 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 0 ?0.25 0.55 0.1 1.7 0.5 5.5 0.5 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (4.9) (5.3)
2sk1254(l), 2sk1254(s) 10 hitachi code jedec eiaj mass (reference value) dpak (s)-(3) conforms 0.28 g as of january, 2001 unit: mm 6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 0 ?0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) (0.1) (0.1)
2sk1254(l), 2sk1254(s) 11 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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